Toshiba 600V Silicon MOSFET (DFN8×8): High-Efficiency Power Solutions
In the era of energy conservation and carbon neutrality, high-efficiency, compact power supply solutions are in high demand across industrial, data center, and renewable energy sectors. Toshiba Electronic Devices & Storage Corporation introduces the 600V N-channel silicon power MOSFET “TK057V60Z1” , a flagship product in the DTMOSVI series featuring a super-junction structure. Packaged in the compact DFN8×8 form factor, this MOSFET redefines performance with ultra-low on-resistance and optimized charge characteristics, enabling higher efficiency and power density for critical power conversion applications.

Key Product Features & Technical Advantages
The TK057V60Z1 integrates advanced super-junction technology and package optimization, offering standout benefits for power supply design:
1. Industry-Leading Low Drain-Source On-Resistance (RDS(ON))
Achieves a typical RDS(ON) of 0.047Ω (measurement conditions: VGS=10V, ID=15A, Ta=25°C), the lowest among Toshiba’s 600V silicon MOSFETs in DFN8×8 package (as of November 2025, per Toshiba survey).
40% lower RDS(ON) compared to Toshiba’s existing TK31V60X (same voltage rating and package), significantly reducing conduction loss.
16% lower RDS(ON) than competing products (per Toshiba’s actual measurements), enhancing overall system efficiency.
2. Optimized Gate Charge Characteristics
Maintains equivalent total gate charge (Qg) despite lower RDS(ON) (a typical trade-off), avoiding increased drive loss.
Gate-drain charge (Qgd) reduced by 32% vs. Toshiba’s existing product, and 28% lower than competing models, minimizing switching loss.
Qg is 4% lower than similar products from competitors, further optimizing drive efficiency.
3. Compact DFN8×8 Package for High Power Density
Surface-mount DFN8×8 package (8.0×8.0×0.85mm typ.) saves PCB space, enabling miniaturization of power supply units.
Ideal for dense circuit layouts in data center servers and industrial equipment, improving power density without compromising performance.
4. Robust Operational Reliability
Supports a maximum drain current (DC) of 40A and channel temperature of 150°C, ensuring stability in harsh industrial environments.
Compatible with Toshiba’s design tools: G0 SPICE model for quick circuit verification and high-precision G2 SPICE model for transient characteristic simulation.
Toshiba’s online circuit simulator allows easy circuit operation verification without building a dedicated simulation environment.
Target Applications
The TK057V60Z1 is engineered for high-efficiency power conversion scenarios, including:
Switch-Mode Power Supplies (SMPS): Data center servers, industrial equipment power units, and high-performance consumer electronics adapters.
Photovoltaic (PV) Power Conditioners: Inverters for solar energy systems, enabling efficient energy conversion from PV panels to grids.
Uninterruptible Power Supplies (UPS): Critical backup power systems requiring low loss and high reliability.
Industrial Power Modules: Motor drives, battery chargers, and welding equipment needing compact, high-efficiency components.
Why Choose Toshiba’s TK057V60Z1?
Efficiency Boost: Combined reduction in conduction and switching loss improves power supply efficiency by up to 15% vs. conventional solutions.
Space Saving: DFN8×8 package reduces PCB footprint by 30% compared to larger through-hole packages, supporting miniaturization.
Proven Quality: Backed by Toshiba’s rigorous testing and quality control, with a mean time between failures (MTBF) exceeding 100 million hours.
Design Support: Access to SPICE models and online simulation tools shortens development cycles and reduces design risks.
Genuine Procurement Channel
To source authentic Toshiba TK057V60Z1 MOSFETs and access official technical support, ecparts.cc provides exclusive access to authorized distributors. On the platform, you can:
Verify distributor authorization status (cross-checked with Toshiba’s official database).
Search real-time inventory for the TK057V60Z1 and related 600V DTMOSVI series models.
Access technical datasheets, simulation models, and customized quotes for bulk orders.
Visit the Toshiba 600V DFN8×8 MOSFET Page on ecparts.cc to browse specifications and streamline your procurement process.
More articles
-
Infineon XENSIV™ MEMS Sensors: Partner with Bosch for Next-Gen EV Safety
Infineon’s XENSIV™ MEMS pressure sensors power Bosch’s EV brake systems, delivering high precision & reliability for automotive safety.
-
Infineon CoolMOS™8: High-Density Power Solutions for Data Centers
Infineon 600V CoolMOS™8 Superjunction MOSFET boosts Great Wall Power’s PSU efficiency, enabling high power density for data centers & EV charging.
-
Toshiba XCEZ Series: 20 Surge Protection Zener Diodes (SOD-523) for Automotive
Toshiba expands XCEZ Series with 20 SOD-523 zener diodes (AEC-Q101, low R_DYN) for automotive ADAS, BMS & ECU surge protection.
-
Toshiba TB9084FTG: 3-Phase BLDC Gate Driver IC for Automotive Use
Toshiba TB9084FTG (AEC-Q100 Grade 0) is a compact 3-phase BLDC gate driver IC for automotive body systems, electric pumps & generators.
-
Toshiba 600V Silicon MOSFET (DFN8×8): High-Efficiency Power Solutions
Toshiba 600V silicon MOSFET in DFN8×8 package delivers low RDS(ON)/Qgd for high-efficiency SMPS, data centers & PV systems.
