As a critical bridge between controllers and power devices (MOSFET/IGBT/SiC/GaN), gate drivers directly determine the switching efficiency, reliability, and noise performance of power systems. ROHM Semiconductor, leveraging proprietary microfabrication technology, has built a leading portfolio of gate drivers centered onisolated design and ultra-high-speed switching capabilities. From automotive-grade SiC drives to GaN-optimized solutions for LiDAR, ROHM’s products (including flagship BM series and Tric3™ technology models) break through traditional performance bottlenecks, enabling energy-saving and miniaturized designs. To ensure genuine procurement, stable inventory, and professional technical support, ROHM partners with top-tier authorized distributors worldwide, empowering manufacturers and designers with seamless access to these mission-critical components.
Core Product Lines & Technical Advantages
ROHM’s gate drivers cover three key segments, tailored to diverse high-voltage and high-speed application needs with industry-leading features:
1. Automotive-Grade Isolated Gate Drivers
Optimized for harsh automotive environments, these drivers support Gen3 SiC and IGBT devices, complying with AEC-Q100 standards and delivering robust isolation performance:
BM61S41RFV-C: A 2-channel isolated driver with 3.75kVrms isolation voltage, ±4A driving capability, and built-in Miller clamp. Operates at 16-24V secondary voltage, featuring secondary UVLO (14.5V/15.0V) for SiC drives in EV powertrains and automotive inverters. Packaged in compact SSOP-B10W, it comes with dedicated evaluation kits for rapid prototyping <superscript:1superscript:4.
BM6112FV-C: A high-power isolated driver with ±20A driving capability and 3.75kVrms isolation. Equipped with short circuit protection, DESAT detection, and soft turn-off functions, it supports SiC/IGBT devices in heavy-duty automotive and industrial applications, ensuring system safety under fault conditions <superscript:4.
BD16950EFV-C: An AEC-Q100 qualified 2-channel half-bridge driver for automotive DC motors (power windows, sunroofs). Features SPI control, 5.5-40V supply voltage, and reverse polarity protection, paired with evaluation kits for plug-and-play testing <superscript:6.
2. Ultra-High-Speed GaN-Optimized Drivers
Designed to maximize GaN device performance, these drivers enable nanosecond-level switching for high-frequency applications like LiDAR and data center power supplies:
BD2311NVX-LB: A GaN-optimized gate driver with a minimum input pulse width of 1.25ns, achieving class-leading ultra-high-speed switching. ROHM’s unique overvoltage suppression technology protects sensitive GaN gates, while adjustable gate resistance adapts to different application requirements. When paired with ROHM’s EcoGaN™ devices, it simplifies design and enhances reliability in LiDAR and high-efficiency power supplies <superscript:2.
3. Industrial Motor Drive Gate Drivers
Integrating proprietary Tric3™ technology, these drivers balance low EMI and reduced switching loss for industrial brushless DC motors:
BD67871MWV-Z: A three-phase brushless DC motor driver with Tric3™ active gate drive technology. It dynamically adjusts gate current in three stages, reducing FET heat generation by 35% compared to conventional solutions while suppressing EMI. The compact UQFN28 package and common pin layout simplify redesign for 12-48V industrial equipment (electric drills, fans) and consumer appliances (vacuum cleaners, air conditioners) <superscript:5.
Key Technological Advantages
Proprietary Isolation Technology: On-chip transformer processes enable compact isolated drivers with 3.75kVrms isolation voltage, 8mm creepage distance, and 65ns max I/O delay, ensuring safety and stability in high-voltage applications <superscript:1.
Comprehensive Protection Mechanisms: Built-in Miller clamp, secondary UVLO, short circuit protection, and thermal shutdown functions prevent device damage, enhancing system reliability in harsh environments <superscript:4.
GaN/SiC Compatibility: Ultra-high-speed switching and optimized gate voltage control maximize the performance of wide-bandgap devices, enabling energy-efficient designs in next-gen power systems <superscript:2.
